Title :
Multiple quantum well optical modulator structures using surface acoustic wave induced Stark effect
Author :
Jain, F.C. ; Bhattacharjee, K.K.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
Abstract :
Multiple-quantum-well (MQW) optical modulator structures using the quantum-confined Stark effect (QCSE) manifested by the application of an electric field induced by a propagating surface acoustic wave (SAW) are proposed. The magnitudes of the parallel E/sub /// and perpendicular E/sub perpendicular to / electric-field components are computed to determine the electroabsorption and change of index of refraction for the AlGaAs-GaAs system. The proposed structures are shown to be less cumbersome than conventional p-i-n configurations used to impress E. In addition, an enhanced performance Bragg modulator/switch which utilizes the QCSE as well as the acoustic phase grating produced by the SAW beam is described.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optics; optical modulation; optical switches; semiconductor quantum wells; semiconductor superlattices; surface acoustic wave devices; AlGaAs-GaAs system; III-V semiconductors; MQW; SAW beam; acoustic phase grating; electric field; electroabsorption; enhanced performance Bragg modulator/switch; index of refraction; multiple quantum well optical modulator; quantum-confined Stark effect; surface acoustic wave induced Stark effect; Acoustic propagation; Acoustic waves; Optical modulation; Optical propagation; Optical refraction; Optical surface waves; Quantum well devices; Stark effect; Surface acoustic waves; Switches;
Journal_Title :
Photonics Technology Letters, IEEE
