• DocumentCode
    895960
  • Title

    Schottky emission in thin-film diodes containing manganese

  • Author

    Hitchcock, R.D.

  • Volume
    56
  • Issue
    3
  • fYear
    1968
  • fDate
    3/1/1968 12:00:00 AM
  • Firstpage
    335
  • Lastpage
    336
  • Abstract
    Temperature-dependent I-V characteristics have been observed in thin-film diodes consisting of Al, Mn, and Pb. Straight-line plots of In I - V1/2, d in I/dV1/2- 1/T, and In (I/T2)-1/T indicate that Schottky emission is taking place. A diode was tested for 98 hours without barrier breakdown.
  • Keywords
    Artificial intelligence; Atmosphere; Glass; Manganese; Polymer films; Schottky diodes; Strips; Temperature; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6287
  • Filename
    1448217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=895960