• DocumentCode
    896148
  • Title

    Symmetrical up-Diffused I2L

  • Author

    Ragonese, Louis J. ; Dening, David C. ; Benedict, Robert V. ; Casey, Richard H. ; Black, Bruce W.

  • Author_Institution
    General Electric Electronics Laboratory EP3-109 P.O. Box 4840 Syracuse, New York 13221
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4346
  • Lastpage
    4348
  • Abstract
    An up-diffused form of symmetrical cell Integrated Injection Logic (I2L) has been designed, modeled, fabricated, and demonstrated to be fully operating after 6 × 1014 neutrons/cm2. This technology is expected also to be capable of full operation after > 3 × 106 Rad(Si) ionizing radiation and immune to information upset at levels above 1 × 1010 Rad(Si)/s based on experience with related devices.
  • Keywords
    Cutoff frequency; Doping profiles; Ionizing radiation; Laboratories; Logic design; Logic devices; Logic gates; Neutrons; Schottky diodes; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335727
  • Filename
    4335727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896148