Title :
Radiation Effects on Silicon MESFET Devices and Circuits
Author :
Shedd, W.M. ; Kim, Y. ; Darley, H.M. ; Houston, T.W.
Author_Institution :
Rome Air Development Center Hanscom AFB, Massachusetts 01731
Abstract :
An experimental evaluation of the radiation tolerance of silicon MESFET devices and simple digital integrated circuits is presented. Circuit performance in both total dose and transient radiation environments have been determined. Test circuits employing both enhancement and depletion logic elements of various geometries are described and the radiation response compared.
Keywords :
Circuit optimization; Circuit testing; Digital integrated circuits; Logic circuits; Logic devices; Logic testing; MESFET circuits; MESFET integrated circuits; Radiation effects; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335732
