• DocumentCode
    896201
  • Title

    Dose Rate Tolerant HEXFET Power Supply

  • Author

    Abare, W.E. ; Martindale, W.K.

  • Author_Institution
    Harris Corporation Government Information Systems Division Melbourne, Florida 32901
  • Volume
    28
  • Issue
    6
  • fYear
    1981
  • Firstpage
    4380
  • Lastpage
    4383
  • Abstract
    A summary of flash x-ray testing of power HEXFET transistors (IRF 351´s) and a power supply employing HEXFETs is presented. HEXFETs are shown to exhibit a dose rate damage sensitivity which is triggered by less than one hundreth of the normal single pulsed energy rating. The power supply testing demonstrates that HEXFETs can be used in high power applications in a high dose rate environment if a current limiting configuration is employed.
  • Keywords
    Capacitance; Circuit testing; FETs; Frequency; MOSFETs; Magnetics; Photoconductivity; Power supplies; Space vector pulse width modulation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4335733
  • Filename
    4335733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896201