Title :
Megarad-Resistant 10nm Gate Dielectrics
Author :
Terry, F.L. ; Naiman, M.L. ; Aucoin, R.J. ; Senturia, S.D.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA 02173
Abstract :
Dielectrics of nitrided silicon dioxide of the order of 10nm thick have been made which withstand 1Mrad(Si) of electron irradiation essientially unaltered.
Keywords :
Annealing; Capacitance; Dielectric substrates; Dielectrics and electrical insulation; Electrons; Laboratories; Mass spectroscopy; Nitrogen; Semiconductor films; Silicon compounds;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1981.4335735
