• DocumentCode
    896321
  • Title

    Domain properties in GaAs oscillating at kHz frequencies

  • Author

    Dorman, P.W.

  • Volume
    56
  • Issue
    3
  • fYear
    1968
  • fDate
    3/1/1968 12:00:00 AM
  • Firstpage
    372
  • Lastpage
    373
  • Abstract
    Probe measurements were made oa high-resistivity GaAs samples which, under illumination, oscillate at kHz frequencies. These measurements have revealed high field domain properties which can be utilized for functional operations similar to those demonstrated with Gunn-effect oscillators, but with scanning rates several orders of magnitude slower.
  • Keywords
    Charge carrier processes; Chemicals; Displays; Effective mass; Frequency; Gallium arsenide; Semiconductor materials; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6322
  • Filename
    1448252
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896321