Title :
A transconductance spectroscopy approach to device level surface state characterization
Author :
Zhao, Jian H. ; Hwang, Robert ; Chang, Steve
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
A device level transconductance spectroscopy approach is developed for characterizing surface states in metal-semiconductor field-effect transistors. A comparison of the theoretical results and the available experimental observations shows that the model can successfully explain both the surface leakage current dependence of transconductance dispersion magnitude reported by M. Ozeki et al. (1982) and the temperature dependence of transconductance dispersion observed by S.R. Blight et al. (1986)
Keywords :
Schottky gate field effect transistors; deep level transient spectroscopy; leakage currents; semiconductor device models; surface electron states; DLTS; MESFET; device level surface state characterization; metal-semiconductor field-effect transistors; surface leakage current; temperature dependence; transconductance dispersion; transconductance spectroscopy; Electron traps; Energy states; FETs; Gallium arsenide; Leakage current; MESFETs; Spectroscopy; Surface resistance; Temperature distribution; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
