Title :
Noise properties of AlGaAs/GaAs MODFET´s
Author :
Anwar, A.F.M. ; Liu, Kuo-Wei
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
An analytically tractable model is presented for the calculation of noise performance of a modulation-doped field-effect transistor (MODFET). The charge control is based on the self-consistent solution of Schrodinger and Poisson´s equation. An improved velocity-field characteristic is used in the calculation. The fit provided by the developed theory to the experimental data is excellent
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor device noise; AlGaAs-GaAs; MODFET; Poisson equation; Schrodinger equation; analytically tractable model; charge control; modulation-doped field-effect transistor; noise performance; noise properties; self-consistent solution; velocity-field characteristic; Electrons; Gallium arsenide; HEMTs; MESFETs; MODFETs; Neodymium; Noise figure; Noise generators; Poisson equations; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
