• DocumentCode
    896411
  • Title

    Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation

  • Author

    Itoh, S. ; Lo, G.Q. ; Kwong, D.L. ; Mathews, V.K. ; Fazan, P.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    40
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    1176
  • Lastpage
    1178
  • Abstract
    It is demonstrated that the use of rapid thermal oxidation (RTO) of thin Si3N4 films deposited on rugged poly-Si electrodes greatly improves the reliability of the films, compared to conventional wet (steam) oxidation. Superior TDDB characteristics and suppression of capacitance loss during high-field stress have been achieved by RTO
  • Keywords
    dielectric losses; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor devices; oxidation; rapid thermal processing; reliability; silicon compounds; DRAM storage dielectric; RTO; Si; Si-SiO2-Si3N4; TDDB characteristics; capacitance loss; high-field stress; high-quality oxide/nitride stacked layers; rapid thermal oxidation; reliability; rugged polysilicon electrodes; Doping; Electrodes; Electron devices; FETs; Fabrication; Gallium arsenide; HEMTs; MODFETs; Semiconductor process modeling; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.214749
  • Filename
    214749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=896411