Title :
Enhanced electron trapping in reoxidized nitrided oxide dielectric at 77 K
Author :
Das, N.C. ; Nathan, V. ; Cable, J.S.
Author_Institution :
Phillips Lab., Kirtland AFB, NM, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The results of experiments on the electron trapping effect in ONO devices at cryogenic temperature are presented and compared with results for SiO2 devices. Various types of ONO devices are used in the experiment in order to determine the mechanism of enhanced electron trapping phenomena in these devices
Keywords :
cryogenics; electron traps; hot carriers; insulated gate field effect transistors; interface electron states; leakage currents; nitridation; oxidation; rapid thermal processing; semiconductor device testing; 77 K; GIDL current; ONO devices; RTP; SiO2-Si3N4; cryogenic temperature; electron trapping; gate induced drain leakage; hot carrier stressing; interface state density; nMOSFET; reoxidized nitrided oxide dielectric; Cryogenics; Dielectric devices; Electron mobility; Electron traps; Hot carriers; Interface states; Rapid thermal processing; Semiconductor films; Superconducting cables; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
