DocumentCode
896435
Title
Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT´s
Author
Pulfrey, David L. ; Searles, Shawn
Author_Institution
Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
Volume
40
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
1183
Lastpage
1185
Abstract
The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant
Keywords
Fermi level; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs HBT; AlGaAs-GaAs single heterojunction bipolar transistor; base-emitter junction; current gain; double-heterojunction bipolar transistors; electron quasi-Fermi level splitting; Bipolar transistors; Boundary conditions; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Quantum computing; Spontaneous emission; Thermal factors; Tunneling; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.214752
Filename
214752
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