Title :
Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis
Author_Institution :
CNR, Istituto LA-MEL, Bologna, Italy
fDate :
6/1/1993 12:00:00 AM
Abstract :
An asymptotic analysis of beam-induced-current profiles of grain boundaries in polycrystalline solar cells presented in the above-titled paper by C.A. Dimitriadis (ibid., vol.32, p.1761-5, Sept. 1985) is corrected and extended to the case of arbitrary interface recombination velocity. Dimitriadis replies that the original analysis is correct within the first-order approximation.<>
Keywords :
EBIC; OBIC; electron-hole recombination; grain boundaries; semiconductors; solar cells; asymptotic analysis; first-order approximation; grain boundary recombination velocity; interface recombination velocity; light-beam-induced current method; polycrystalline semiconductors; scanning electron beam induced current; solar cells; Absorption; Electron devices; Equations; Grain boundaries; Linear approximation; Radiative recombination; Signal analysis; Spontaneous emission; Tail; Taylor series;
Journal_Title :
Electron Devices, IEEE Transactions on
