DocumentCode
896469
Title
Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis
Author
Donolato, C.
Author_Institution
CNR, Istituto LA-MEL, Bologna, Italy
Volume
40
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
1190
Lastpage
1191
Abstract
An asymptotic analysis of beam-induced-current profiles of grain boundaries in polycrystalline solar cells presented in the above-titled paper by C.A. Dimitriadis (ibid., vol.32, p.1761-5, Sept. 1985) is corrected and extended to the case of arbitrary interface recombination velocity. Dimitriadis replies that the original analysis is correct within the first-order approximation.<>
Keywords
EBIC; OBIC; electron-hole recombination; grain boundaries; semiconductors; solar cells; asymptotic analysis; first-order approximation; grain boundary recombination velocity; interface recombination velocity; light-beam-induced current method; polycrystalline semiconductors; scanning electron beam induced current; solar cells; Absorption; Electron devices; Equations; Grain boundaries; Linear approximation; Radiative recombination; Signal analysis; Spontaneous emission; Tail; Taylor series;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.214756
Filename
214756
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