DocumentCode :
896508
Title :
Short-circuit dissipation of static CMOS circuitry and its impact on the design of buffer circuits
Author :
Veendrick, Harry J.M.
Volume :
19
Issue :
4
fYear :
1984
fDate :
8/1/1984 12:00:00 AM
Firstpage :
468
Lastpage :
473
Abstract :
A simple formula is derived for quick calculation of the maximum short-circuit dissipation of static CMOS circuits. A detailed discussion of this short-circuit dissipation is given based on the behavior of the inverter when loaded with different capacitances. It was found that if each inverter of a string is designed in such a way that the input and output rise and fall times are equal, the short-circuit dissipation will be much less than the dynamic dissipation (<20%). This result has been applied to a practical design of a CMOS driving circuit (buffer), which is commonly built up of a string of inverters. An expression has also been derived for a tapering factor between two successive inverters of such a string to minimize parasitic power dissipation. Finally, it is concluded that optimization in terms of power dissipation leads to a better overall performance (in terms of speed, power, and area) than is possible by minimization of the propagation delay.
Keywords :
Buffer circuits; Field effect integrated circuits; Invertors; Short-circuit currents; buffer circuits; field effect integrated circuits; invertors; short-circuit currents; CMOS logic circuits; CMOS technology; Frequency; Inverters; MOSFETs; Parasitic capacitance; Power dissipation; Signal processing; Threshold voltage; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1984.1052168
Filename :
1052168
Link To Document :
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