DocumentCode
896592
Title
A wide range linear variable resistor by buried channel MOS/SIMOX
Author
Akiya, Masahiro ; Nakashima, Sadao ; Kato, Kotaro
Volume
19
Issue
4
fYear
1984
Firstpage
526
Lastpage
531
Abstract
A low-distortion linear variable resistor using an offset gate buried-channel MOSFET fabricated by SIMOX technology is described. The offset gate structure on the insulating substrate provides 15 to 100 k/spl Omega/ drain-to-source resistance, and 2.5% total harmonic distortion at 100 k/spl Omega/. In a battery-feed circuit application for a subscriber-line interface circuit, the area of a variable conventional polysilicon resistor.
Keywords
Electronic switching systems; Field effect integrated circuits; Insulated gate field effect transistors; Large scale integration; Resistors; Telephone exchanges; electronic switching systems; field effect integrated circuits; insulated gate field effect transistors; large scale integration; resistors; telephone exchanges; Batteries; Fabrication; Feeds; Impurities; Insulation; MOSFET circuits; Resistors; Silicon; Threshold voltage; Total harmonic distortion;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1984.1052177
Filename
1052177
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