Title :
Modeling of Surrounding Gate MOSFETs With Bulk Trap States
Author :
Cho, Hyun-Jin ; Plummer, James D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA
Abstract :
We report a simple analytical model for surrounding gate MOSFETs including bulk traps. Based on the depletion approximation and the assumption that bulk traps are uniformly distributed inside the bandgap, we solved Poisson´s equation in cylindrical coordinates and derived the general solution of potential distribution. Extraction of threshold voltage and subthreshold slope were conducted. The analytical solution yields good agreement with MEDICI simulations confirming the model. The model predicts a linear threshold voltage drop, depending on the trap density, as the diameter of the device decreases when the channel is fully depleted
Keywords :
MOSFET; electron traps; semiconductor device models; MEDICI simulations; Poisson equation; bulk trap states; cylindrical coordinates; depletion approximation; linear threshold voltage drop; potential distribution; surrounding gate MOSFET modeling; trap density; Analytical models; Grain boundaries; MOSFETs; Medical simulation; Photonic band gap; Poisson equations; Predictive models; Random access memory; Silicon; Threshold voltage; Bulk traps; recrystallized silicon; surrounding gate transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887521
