A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones

Author

Makioka, Satoshi ; Yoshikawa, Noriyuki ; Kanazawa, Kunihiko

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

44

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

717

Lastpage

722

Abstract

A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P_1dB of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm². We consider that the MuMIC is the most effective candidate for high frequency circuits

Keywords

III-V semiconductors; cordless telephone systems; gallium arsenide; land mobile radio; microwave integrated circuits; microwave power amplifiers; multichip modules; telephony; 1.9 GHz; 3.6 V; 40.2 percent; GaAs; GaAs MCM power amplifier; digital cordless telephones; ferroelectric capacitors; high frequency circuits; multilayer microwave integrated circuits; power-added efficiency; Capacitors; Ferroelectric materials; Frequency; Gallium arsenide; High power amplifiers; Microwave integrated circuits; Nonhomogeneous media; Power amplifiers; Telephony; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.493925

Filename

493925