Title :
A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones
Author :
Makioka, Satoshi ; Yoshikawa, Noriyuki ; Kanazawa, Kunihiko
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
5/1/1996 12:00:00 AM
Abstract :
A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P1dB of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm2. We consider that the MuMIC is the most effective candidate for high frequency circuits
Keywords :
III-V semiconductors; cordless telephone systems; gallium arsenide; land mobile radio; microwave integrated circuits; microwave power amplifiers; multichip modules; telephony; 1.9 GHz; 3.6 V; 40.2 percent; GaAs; GaAs MCM power amplifier; digital cordless telephones; ferroelectric capacitors; high frequency circuits; multilayer microwave integrated circuits; power-added efficiency; Capacitors; Ferroelectric materials; Frequency; Gallium arsenide; High power amplifiers; Microwave integrated circuits; Nonhomogeneous media; Power amplifiers; Telephony; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
