DocumentCode
896790
Title
Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain
Author
Hua, W.-C. ; Chang, H.-L. ; Wang, T. ; Lin, C.-Y. ; Lin, C.-P. ; Lu, S.S. ; Meng, C.C. ; Liu, C.W.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume
54
Issue
1
fYear
2007
Firstpage
160
Lastpage
162
Abstract
The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ~0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions
Keywords
MOSFET circuits; UHF amplifiers; integrated circuit packaging; low noise amplifiers; tensile strength; 2.4 GHz; bias conditions; biaxial tensile strain; cutoff frequency; low noise amplifier; nMOSFET; noise figure; package strain; strain conditions; transconductance; Capacitive sensors; Frequency; Low-noise amplifiers; MOSFET circuits; Noise figure; Noise measurement; Noise reduction; Packaging; Tensile strain; Transconductance; Biaxial strain; cutoff frequency; low-noise amplifier (LNA); noise factor; noise figure (NF); package strain; tensile; transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.887194
Filename
4039697
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