Title :
Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain
Author :
Hua, W.-C. ; Chang, H.-L. ; Wang, T. ; Lin, C.-Y. ; Lin, C.-P. ; Lu, S.S. ; Meng, C.C. ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ~0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions
Keywords :
MOSFET circuits; UHF amplifiers; integrated circuit packaging; low noise amplifiers; tensile strength; 2.4 GHz; bias conditions; biaxial tensile strain; cutoff frequency; low noise amplifier; nMOSFET; noise figure; package strain; strain conditions; transconductance; Capacitive sensors; Frequency; Low-noise amplifiers; MOSFET circuits; Noise figure; Noise measurement; Noise reduction; Packaging; Tensile strain; Transconductance; Biaxial strain; cutoff frequency; low-noise amplifier (LNA); noise factor; noise figure (NF); package strain; tensile; transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887194
