A 1.5 Gbit/s GaAs four-channel selector LSI with monolithically integrated newly structured GaAs ohmic contact MSM photodetector and laser driver

Author

Yamanaka, Naoaki ; Takada, Tohru

Author_Institution

NTT Commun. Switching Lab., Tokyo, Japan

Volume

1

Issue

10

fYear

1989

Firstpage

310

Lastpage

312

Abstract

A monolithic integrated 1.5 Gb/s high-speed four-channel optoelectronic integrated circuit (OEIC) selector GaAs LSI circuit is discussed. This LSI circuit incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gb/s and exhibits low power dissipation of 927 mW.<>

Keywords

III-V semiconductors; gallium arsenide; infrared detectors; integrated optoelectronics; large scale integration; metal-semiconductor-metal structures; photodetectors; 1.5 Gbit/s; 927 mW; AuGe-Ni-GaAs; AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal; III-V semiconductors; decision circuit; high-speed laser driver; interdigitated structural photodetector; monolithic integrated high-speed four channel optoelectronic integrated circuit selector GaAs LSI circuit; operating speed; photocurrent; power dissipation; preamplifiers; Driver circuits; Gallium arsenide; High speed integrated circuits; Large scale integration; Monolithic integrated circuits; Ohmic contacts; Optoelectronic devices; Photoconductivity; Photodetectors; Preamplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.43358

Filename

43358