Title :
Analytical representations of solid-state devices
fDate :
4/1/1968 12:00:00 AM
Abstract :
Simple expressions for the dependence of hole and electron mobilities upon free carrier densities are utilized to derive equivalent representations of the diode equation as well as other solid-state device equations. The resulting mathematical models vividly display the effects of impurity concentrations in the semiconductor regions on important device parameters.
Keywords :
Charge carrier density; Displays; Electron mobility; Equations; Error analysis; P-n junctions; Semiconductor device doping; Semiconductor diodes; Semiconductor process modeling; Solid state circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6369
