Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding-Gate MOSFETs

Author

Moldovan, Oana ; Iñiguez, Benjamin ; Jiménez, David ; Roig, Jaume

Author_Institution

Departament d´´Enginyeria Electronica, Electrica i Automatica, Univ. Rovira i Virgili, Tarragona

Volume

54

Issue

1

fYear

2007

Firstpage

162

Lastpage

165

Abstract

We present an analytical and continuous charge model for cylindrical undoped surrounding-gate MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson equation. The drain current, charge, and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show excellent agreement with three-dimensional numerical device simulations

Keywords

MOSFET; Poisson equation; semiconductor device models; Poisson equation; analytical charge models; compact device modelling; continuous explicit functions; intrinsic capacitances; undoped cylindrical surrounding-gate MOSFET; unified charge control model; CMOS technology; Capacitance; Circuit simulation; Electrostatics; Integrated circuit modeling; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Silicon; Compact device modelling; intrinsic capacitances; surrounding-gate (SGT) MOSFET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887213

Filename

4039703