Title :
Arbitrary Density of States in an Organic Thin-Film Field-Effect Transistor Model and Application to Pentacene Devices
Author :
Oberhoff, Daniel ; Pernstich, Kurt P. ; Gundlach, David J. ; Batlogg, Bertram
Author_Institution :
Lab. for Solid State Phys., ETH Zurich
Abstract :
We present a modular numerical model for organic thin-film field-effect transistors (OTFTs) that allows for an arbitrary density of states to be independently defined for the semiconductor bulk and the semiconductor surface next to the gate insulator. We can derive the surface charge density dependence on the interface field as well as the space-charge-limited current characteristics. Together with a model of the contacts, we arrive at a physical model that is applied to a series of OTFTs in staggered inverted (top contact) geometry with various gate insulator treatments
Keywords :
electronic density of states; insulated gate field effect transistors; organic semiconductors; semiconductor device models; space charge; thin film transistors; OTFT model; density of states; gate insulator treatments; organic thin-film field-effect transistor model; pentacene devices; semiconductor surface; space-charge-limited current characteristics; surface charge density dependence; FETs; Insulation; Numerical models; Organic thin film transistors; Pentacene; Semiconductor thin films; Solid modeling; Surface treatment; Thin film devices; Thin film transistors; Density of states; FET; modeling; organic semiconductor; pentacene; thin-film transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887200
