Arbitrary Density of States in an Organic Thin-Film Field-Effect Transistor Model and Application to Pentacene Devices

Author

Oberhoff, Daniel ; Pernstich, Kurt P. ; Gundlach, David J. ; Batlogg, Bertram

Author_Institution

Lab. for Solid State Phys., ETH Zurich

Volume

54

Issue

1

fYear

2007

Firstpage

17

Lastpage

25

Abstract

We present a modular numerical model for organic thin-film field-effect transistors (OTFTs) that allows for an arbitrary density of states to be independently defined for the semiconductor bulk and the semiconductor surface next to the gate insulator. We can derive the surface charge density dependence on the interface field as well as the space-charge-limited current characteristics. Together with a model of the contacts, we arrive at a physical model that is applied to a series of OTFTs in staggered inverted (top contact) geometry with various gate insulator treatments

Keywords

electronic density of states; insulated gate field effect transistors; organic semiconductors; semiconductor device models; space charge; thin film transistors; OTFT model; density of states; gate insulator treatments; organic thin-film field-effect transistor model; pentacene devices; semiconductor surface; space-charge-limited current characteristics; surface charge density dependence; FETs; Insulation; Numerical models; Organic thin film transistors; Pentacene; Semiconductor thin films; Solid modeling; Surface treatment; Thin film devices; Thin film transistors; Density of states; FET; modeling; organic semiconductor; pentacene; thin-film transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887200

Filename

4039706