DocumentCode :
896902
Title :
A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs
Author :
Ortiz-Conde, Adelmo ; García-Sánchez, Francisco J. ; Muci, Juan ; Malobabic, Slavica ; Liou, Juin J.
Author_Institution :
Solid State Electron. Lab., Simon Bolivar Univ., Caracas
Volume :
54
Issue :
1
fYear :
2007
Firstpage :
131
Lastpage :
140
Abstract :
In this paper, we review the compact-modeling framework for undoped double-gate (DG) silicon-on-insulator (SOI) MOSFETs. The use of multiple gates has emerged as a new technology to possibly replace the conventional planar MOSFET when its feature size is scaled to the sub-50-nm regime. MOSFET technology has been the choice for mainstream digital circuits for very large scale integration as well as for other high-frequency applications in the low-gigahertz range. But the continuing scaling of MOSFET presents many challenges, and multiple-gate, particularly DG, SOI devices seem to be attractive alternatives as they can effectively reduce the short-channel effects and yield higher current drive. Core compact models, including the analysis for surface potential and drain-current, for both the symmetric and asymmetric DG SOI MOSFETs, are discussed and compared. Numerical simulations are also included in order to assess the validity of the models reviewed
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; MOS compact modeling; asymmetric DGMOSFET; current drive; digital circuits; drain current; high-frequency applications; low-gigahertz range; multigate MOSFET; planar MOSFET; short-channel effects; silicon-on-insulator MOSFET; surface potential; symmetric DG MOSFET; undoped body MOS; very large scale integration; CMOS technology; Computer science; Digital circuits; Integrated circuit interconnections; MOSFETs; Microprocessors; Moore´s Law; Semiconductor device modeling; Silicon on insulator technology; Very large scale integration; Asymmetric double-gate (DG) MOSFET; MOS compact modeling; drain–current model; intrinsic channel; multigate MOSFET; silicon-on-insulator (SOI) MOSFET; symmetric DG MOSFET; undoped body MOS;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2006.887046
Filename :
4039707
Link To Document :
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