Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates

Author

Shangguan, W.Z. ; Zhou, Xing ; Chandrasekaran, Karthik ; Zhu, Zhaomin ; Rustagi, Subhash C. ; Chiah, Siau Ben ; See, Guan Huei

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

54

Issue

1

fYear

2007

Firstpage

169

Lastpage

172

Abstract

We present a rigorously derived analytical Poisson solution for undoped semiconductors and apply the general solution to generic MOSFETs with two gates, unifying different types such as silicon-on-insulator (SOI) and symmetric and asymmetric double gate (s-DG and a-DG) structures. The Newton-Raphson method is used to solve surface-potential equations resulting from the application of boundary conditions to the general Poisson solution, with an initial guess that is very close to the exact solution. The universal initial guess can be used as an approximate explicit solution for fast evaluation, while the iterative solution can be used for benchmark tests. The results demonstrate the unification of surface-potential solutions having an accuracy of 10^-15 V for SOI, a-DG, and s-DG MOSFETs, which are achieved within two to six iterations. Furthermore, the explicit solution yields less than 3.5% error for back-to-front-gate oxide thickness ratios larger than 25

Keywords

MOSFET; Newton-Raphson method; Poisson equation; semiconductor device models; silicon-on-insulator; MOSFET; Newton-Raphson method; Poisson solution; approximate explicit solution; asymmetric double gate structure; boundary conditions; iterative solution; silicon-on-insulator; surface potential equations; symmetric double gate structure; undoped semiconductors; Benchmark testing; Boundary conditions; Collaborative work; Contracts; Doping; MOSFETs; Microelectronics; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Compact modeling; MOSFET; silicon-on-insulator (SOI); surface potential; symmetric and asymmetric double gate (s-DG and a-DG);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887518

Filename

4039710