Title :
A 1 GHz 50 mW GaAs dual modulus divider IC
Author :
Shimizu, Shoichi ; Kamatani, Yukio ; Toyoda, Nobuyuki ; Kanazawa, Katsue ; Mochizuki, Masao ; Terada, Toshiyuki ; Hojo, Akimichi
Abstract :
A 1-GHz 50-mW GaAs dual modulus divider IC has been realized by using source-coupled FET logic. Dividing values are 128/129 and 64/65. The chip size is 0.94/spl times/1.07 mm, in which 223 FETs, 101 diodes, and 80 resistors are integrated. The platinum buried gate planar FET process is used in the IC fabrication. The maximum toggle frequency is 1.12 GHz and IC current is 9.55 mA at 5 V supply voltage. About 10-30% chip yield was achieved in the wide (0.1-0.4 V) enhancement FET threshold voltage range.
Keywords :
Dividing circuits; Flip-flops; Gallium arsenide; III-V semiconductors; Integrated logic circuits; dividing circuits; flip-flops; gallium arsenide; integrated logic circuits; Counting circuits; FET integrated circuits; Frequency conversion; Frequency synthesizers; Gallium arsenide; Logic; Phase locked loops; Schottky diodes; Transceivers; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052212
