Title :
Statistics of Grain Boundaries in Polysilicon
Author :
Watanabe, Hiroshi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Abstract :
A nanometer-scale variation of grain boundary locations in gate polysilicon is investigated in detail based on the assumption that the arrangement of grain boundaries obeys Poisson distribution. The statistics of grain boundaries described here reveals a relation between nanoscopic location and the arrangement of grain boundaries, which implies fluctuation in transistor characteristics of 45-nm and beyond MOSFETs
Keywords :
MOSFET; Poisson distribution; grain boundaries; nanoelectronics; silicon; 45 nm; MOSFET; Poisson distribution; Si; gate polysilicon; grain boundary locations; statistics; Fluctuations; Grain boundaries; Leakage current; MOS devices; MOSFETs; Random access memory; Silicon; Statistical distributions; Statistics; Thin film transistors; Entropy; MOS devices; Poisson distribution; SRAM; fluctuation; grain boundary; polysilicon; statistics;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887212
