Title :
CMOS Device and Circuit Degradations Subject to HfO2 Gate Breakdown and Transient Charge-Trapping Effect
Author :
Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
Abstract :
The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; low noise amplifiers; oscillators; semiconductor device breakdown; CMOS circuit degradations; CMOS device degradations; HfO2; HfO2 MOSFET; HfO2 gate breakdown; fast transient charge-trapping effect; gate leakage current; hard breakdown; inverter transfer characteristics; low-noise amplifier; n-channel transistor; noise figure; power law characteristics; ring oscillator; soft breakdown; Breakdown voltage; Circuits; Degradation; Hafnium oxide; Inverters; Leakage current; Low voltage; MOSFETs; Noise measurement; Ring oscillators; CMOS oscillators; dielectric breakdown (BD); fast transient charge effect; leakage current; low-noise amplifier (LNA); reliability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.887517
