An integrated approach to statistical modeling of bipolar devices for LSI

Procedures, most of them programmed in Fortran and called model generators, have been established to permit the generation of statistical circuit models for an open-ended set of device designs for a bipolar silicon process. Among all the devices of the same and of different types on a chip, certain physical characteristics are common. The models maintain the resulting relationships among the electrical properties of each of these devices. Very general suggestions are given for applying the modeling approach to other technologies. A comparison of predicted and measured distributions of propagation delay for a logic gate shows good agreement.