• DocumentCode
    897019
  • Title

    High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique

  • Author

    Higashi, T. ; Takeuchi, T. ; Morito, K. ; Matsuda, M. ; Soda, H.

  • Author_Institution
    Opt. Semicond. Devices Lab., Fujitsu Labs. Ltd., Kanagawa, Japan
  • Volume
    7
  • Issue
    8
  • fYear
    1995
  • Firstpage
    828
  • Lastpage
    829
  • Abstract
    We fabricated 1.5-μm semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-μm-long laser whose rear facet was HR-coated.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; sputter etching; 1.5 mum; 150 C; 300 mum; CW operating temperature; InGaAsP-InP; fabrication; high-temperature CW operation; mesa definition; reactive ion-etching technique; rear facet; semi-insulating buried heterostructure lasers; strained-layer multiple-quantum wells; Dry etching; Epitaxial growth; Epitaxial layers; Gas lasers; Indium phosphide; Mirrors; Optical devices; Temperature; Threshold current; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.403986
  • Filename
    403986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897019