Title :
High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique
Author :
Higashi, T. ; Takeuchi, T. ; Morito, K. ; Matsuda, M. ; Soda, H.
Author_Institution :
Opt. Semicond. Devices Lab., Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
We fabricated 1.5-μm semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-μm-long laser whose rear facet was HR-coated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; sputter etching; 1.5 mum; 150 C; 300 mum; CW operating temperature; InGaAsP-InP; fabrication; high-temperature CW operation; mesa definition; reactive ion-etching technique; rear facet; semi-insulating buried heterostructure lasers; strained-layer multiple-quantum wells; Dry etching; Epitaxial growth; Epitaxial layers; Gas lasers; Indium phosphide; Mirrors; Optical devices; Temperature; Threshold current; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
