Gain-coupled strained layer MQW-DFB lasers with an essentially simplified fabrication process for /spl lambda/=1.55 μm

Author

Rast, A. ; Johannes, T.W. ; Harth, W. ; Rieger, J.

Author_Institution

Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen, Germany

Volume

7

Issue

8

fYear

1995

Firstpage

830

Lastpage

832

Abstract

A gain-coupled (GC) strained-layer (SL) multi-quantum-well (MQW) distributed-feedback (DFB) laser with a metallized surface grating and a substantially simplified fabrication process made by single-step epitaxy without corrugation overgrowth is described. The complex coupling coefficient can be adjusted by the contact metallization. Room-temperature single-mode continuous-wave (CW) operation with a threshold current of 22 mA, an output power of 20 mW, and a linewidth of 2.5 MHz is demonstrated.<>

Keywords

distributed feedback lasers; laser beams; laser feedback; optical couplers; optical fabrication; quantum well lasers; semiconductor device metallisation; vapour phase epitaxial growth; 1.55 mum; 20 mW; 22 mA; 298 K; MQW-DFB lasers; complex coupling coefficient; contact metallization; continuous-wave operation; fabrication process; gain-coupled strained-layer laser; linewidth; metallized surface grating; multi-quantum-well distributed-feedback laser; output power; room-temperature single-mode operation; single-step epitaxy; threshold current; Absorption; Fiber lasers; Gratings; Laser feedback; Metallization; Optical device fabrication; Optical surface waves; Optical waveguides; Quantum well devices; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.403987

Filename

403987