Title :
A monolithic 14 bit D/A converter fabricated with a new trimming technique (DOT)
Author :
Kato, Kotaro ; Ono, Terukazu ; Amemiya, Yoshihito
Abstract :
An electrical trimming technique for a heavily doped polysilicon resistor (DOT) has been successfully applied to the fabrication of a monolithic 14-bit D/A converter. The converter trimmed by DOT showed a nonlinearity error of less than 1/4 LSB, which means the converter substantially has 15-bit accuracy. Resistance post-trimming stability is greatly improved by introducing an excess trimming and restoration process in DOT, resulting in the achievement of a resistance stability of within /spl plusmn/0.01% of 100 years use at 100/spl deg/C.
Keywords :
Digital-analogue conversion; Monolithic integrated circuits; digital-analogue conversion; monolithic integrated circuits; Current density; Doping; Electric resistance; Error correction; Fabrication; Impurities; Resistors; Silicon; Stability; US Department of Transportation;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1984.1052224