Title :
Low-threshold, high-power, 1.3-μm wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers
Author :
Chao, C.-P. ; Garbuzov, D.Z. ; Shiau, G.-J. ; Forrest, S.R. ; DiMarco, L.A. ; Harvey, M.G.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
A 1.3-μm wavelength, InGaAsP-InP folded-cavity, surface-emitting laser with CH4-H2 reactive ion-etched vertical and 45/spl deg/ angled facets was demonstrated for the first time. Continuous-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light. These surface-emitting lasers with two dry-etched facets are suitable for wafer-level testing and for monolithic integration with other InP-based photonic devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; sputter etching; surface emitting lasers; 1.3 mum; 15 mW; 32 mA; CW power; H/sub 2/; InGaAsP-InP; InGaAsP-InP etched-facet laser; InP-based photonic devices; continuous-wave threshold currents; dry-etched facets; etched-facet folded-cavity surface-emitting lasers; high-power laser; low-threshold laser; methane-H/sub 2/; monolithic integration; reactive ion-etched facets; surface-emitted light; surface-emitting lasers; wafer-level testing; Chaotic communication; Etching; Indium phosphide; Mirrors; Optical surface waves; Photonic integrated circuits; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
