Title :
Optical memory planes using LiNbO3and LiTaO3
Author :
Chen, F.S. ; Denton, R.T. ; Nassau, K. ; Ballman, A.A.
fDate :
4/1/1968 12:00:00 AM
Abstract :
Optical memory planes are proposed in which writing and nondestructive reading would be performed optically using a laser-induced inhomogeneity of refractive indices which has been observed in poled single crystals of LiNbO3and LiTaO3. Writing times of the order of 0.5 millisecond using a 0.4-watt Ar laser with a bit density in excess of 106per square inch appear feasible.
Keywords :
Crystals; Discharges; Electron tubes; Gas lasers; Helium; Laser excitation; Laser transitions; Optical refraction; Steady-state; Writing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6401
