Self-aligned high-quality total internal reflection mirrors

Author

Han, H. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

7

Issue

8

fYear

1995

Firstpage

899

Lastpage

901

Abstract

High-quality total internal reflection (TIR) mirrors are fabricated by a new self-aligned etch process using SiCl/sub 4/ reactive ion etching (RTE). The self-aligned etch process requires only a single SiO/sub 2/ mask layer without additional dielectric depositions and lift-off steps. The reflectivity of the TIR mirrors are measured by characterizing InGaAs-GaAs-AlGaAs strained-layer quantum-well heterostructure crank lasers that consist of crank-shaped ridge waveguides with two TIR mirrors and two cleaved facets. It is found that the self-aligned TIR mirrors have a very high reflectivity of 0.90 (0.46 dB/90/spl deg/ loss).<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; optical fabrication; quantum well lasers; ridge waveguides; sputter etching; waveguide lasers; InGaAs-GaAs-AlGaAs; SiCl/sub 4/; SiCl/sub 4/ reactive ion etching; SiO/sub 2/; SiO/sub 2/ mask layer; cleaved facets; crank-shaped ridge waveguides; internal reflection mirrors; reflectivity; self-aligned etch process; self-aligned mirrors; strained-layer quantum-well heterostructure crank lasers; Dielectrics; Etching; Mirrors; Optical reflection; Optical waveguides; Photonic integrated circuits; Quantum well lasers; Reflectivity; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.404008

Filename

404008