• DocumentCode
    897298
  • Title

    Avalanche gain in InAsyP/sub 1-y/ (0.1

  • Author

    Kim, D.S. ; Forrest, S.R. ; Olsen, G.H. ; Lange, M.J. ; Martinelli, R.U. ; Di Giuseppe, N.J.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • Volume
    7
  • Issue
    8
  • fYear
    1995
  • Firstpage
    911
  • Lastpage
    913
  • Abstract
    Uniform avalanche gains of 40 to 80 are observed in InAs/sub y/P/sub 1-y/ (0.1\n\n\t\t
  • Keywords
    II-VI semiconductors; avalanche breakdown; avalanche photodiodes; dark conductivity; indium compounds; infrared detectors; ionisation; photodetectors; 1 nA; 2.1 mum; 200 pA; In/sub x/Ga/sub 1-x/; InAs/sub y/P/sub 1-y/; InAsP; InP; LIDAR; avalanche gains; avalanche photodiodes; breakdown voltage; defect levels; electrons; gas-sensing applications; holes; ionization coefficients; lattice parameter; lattice strains; mid-IR spectral range; photodetectors; primary dark current; secondary carriers; Avalanche photodiodes; Capacitive sensors; Charge carrier processes; Composite materials; Dark current; Indium phosphide; Ionization; Laser radar; Lattices; Moisture;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.404012
  • Filename
    404012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897298