Title :
Field-effect transistor noise at low temperatures
fDate :
5/1/1968 12:00:00 AM
Abstract :
An investigation of junction FET noise in the temperature range of 300°K to 77°K indicates that the temperature dependence of low-frequency noise spectra may be attributed to charge fluctuations at generation centers in the depletion region.
Keywords :
Algebra; Control systems; Energy states; FETs; Fluctuations; Hydrogen; Low-frequency noise; Noise measurement; Temperature distribution; Voltage measurement;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6433
