A Trapping Mechanism for Autodoping in Silicon Epitaxy - II. Parameter Extraction and Simulations

In the previous paper [1], an improved dopant incorporation model was presented. Three parameters were found to define the model. In the present paper, the experimental procedure for determining these parameters and the numerical implementation of the model are described. Evidence for identifying autodoping as an initial transient profile is presented. With properly determined parameters, the model is capable of simulating autodoping profiles obtained from the literature, covering a variety of reactor geometries, silicon sources, and deposition conditions.