DocumentCode
897676
Title
10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2
Author
Washio, Katsuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru
Volume
20
Issue
1
fYear
1985
Firstpage
157
Lastpage
161
Abstract
An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I/sup 2/L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques shallow grooved-isolation, I/sup 2/L active layer etching, and I/sup 2/L current gain increase. I/sup 2/L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BV/sub CEO/of more than 10 V and an f/sub T/ of 5 GHz, and lateral p-n-p transistors having an f/sub T/ of 150 MHz.
Keywords
Bipolar integrated circuits; Integrated circuit technology; Integrated injection logic; VLSI; Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1985.1052289
Filename
1052289
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