DocumentCode :
897676
Title :
10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2
Author :
Washio, Katsuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru
Volume :
20
Issue :
1
fYear :
1985
Firstpage :
157
Lastpage :
161
Abstract :
An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I/sup 2/L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques shallow grooved-isolation, I/sup 2/L active layer etching, and I/sup 2/L current gain increase. I/sup 2/L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BV/sub CEO/of more than 10 V and an f/sub T/ of 5 GHz, and lateral p-n-p transistors having an f/sub T/ of 150 MHz.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Integrated injection logic; VLSI; Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1985.1052289
Filename :
1052289
Link To Document :
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