• DocumentCode
    897676
  • Title

    10K Gate I/sup 2/L and 1K Component Analog Compatible Bipolar VLSI Technology - HIT-2

  • Author

    Washio, Katsuyoshi ; Watanabe, Tomoyuki ; Okabe, Takahiro ; Horie, Noboru

  • Volume
    20
  • Issue
    1
  • fYear
    1985
  • Firstpage
    157
  • Lastpage
    161
  • Abstract
    An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I/sup 2/L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques shallow grooved-isolation, I/sup 2/L active layer etching, and I/sup 2/L current gain increase. I/sup 2/L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BV/sub CEO/of more than 10 V and an f/sub T/ of 5 GHz, and lateral p-n-p transistors having an f/sub T/ of 150 MHz.
  • Keywords
    Bipolar integrated circuits; Integrated circuit technology; Integrated injection logic; VLSI; Analog circuits; Consumer products; Costs; Cutoff frequency; Dry etching; Isolation technology; Office automation; Oxidation; System-on-a-chip; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1985.1052289
  • Filename
    1052289