Title :
High-Speed IIL Circuits Using a Sidewall Base Contact Structure
Author :
Nakamura, Tohru ; Nakazato, Kazuo ; Miyazaki, Takao ; Okabe, Takahiro ; Nagata, Minoru
fDate :
2/1/1985 12:00:00 AM
Abstract :
New high-speed self-aligned IIL structures with 3 μm X 3 μm collectors that produce minimum gate delays of 290 ps/gate(fanout is 1) and power delay products. of 15 fJ/gate at low injector current levels are described. Maximum toggle frequency in an IIL T-type flip-flop is measured at 5 mW and found to be up to 315 MHz.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Integrated injection logic; Integrated logic circuits; VLSI; Circuits; Delay; Electrodes; Epitaxial layers; Flip-flops; Frequency measurement; Power dissipation; Ring oscillators; Sputter etching; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052291
