• DocumentCode
    897801
  • Title

    In(Ga)As Quantum Ring Terahertz Photodetector With Cutoff Wavelength at 175 \\mu m

  • Author

    Lee, Jheng-Han ; Dai, Jong-Horng ; Chan, Chi-Feng ; Lee, Si-Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • Volume
    21
  • Issue
    11
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    721
  • Lastpage
    723
  • Abstract
    An InAs-GaAs quantum ring infrared photodetector has been fabricated successfully. The photodetector demonstrates a cutoff wavelength at 175 mum (1.7 THz) and the detectivity of 1.3times107 cm Hz1/2/W at 80 K. The precise control of the In(Ga)As ring height by capping GaAs layer thickness is responsible for extension of the detector response to terahertz range.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; optical fabrication; optical materials; photodetectors; semiconductor devices; terahertz wave detectors; GaAs; InAs-GaAs; frequency 1.7 THz; quantum ring infrared photodetector fabrication; quantum ring terahertz photodetector; temperature 80 K; wavelength 175 mum; Annealing; Epitaxial growth; Frequency; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photodetectors; Quantum dots; Substrates; Temperature; Infrared detectors; photodetectors; quantum dots (QDs); quantum rings (QRs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2017276
  • Filename
    4939383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=897801