DocumentCode :
897884
Title :
Cavity Stabilized X-Band Gunn Oscillator
Author :
Ito, Yukio ; Komizo, Hidemitsu ; Sasagawa, Shinji
Volume :
18
Issue :
11
fYear :
1970
fDate :
11/1/1970 12:00:00 AM
Firstpage :
890
Lastpage :
897
Abstract :
The design and resultant experimental investigation of a pulling mechanism for a highly stable X-band Gunn oscillator, stabilized by a high Q TE011-mode reflection cavity, are described. The oscillator shows a temperature coefficient of less than -7 x 10-7 / °C,a low FM noise of 8 Hz per 1-kHz BW at 100 kHz from the carrier, and a wide-band mechanical-tuning capability of several hundred megahertz. In addition, experimental results concerning the hysteresis phenomena of oscillating frequencies, power, FM-noise versus cavity-pulling frequencies, and bias voltages are described.
Keywords :
Admittance; Frequency; Gunn devices; Hysteresis; Impedance; Indium tin oxide; Injection-locked oscillators; Semiconductor device noise; Semiconductor diodes; Temperature;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1970.1127367
Filename :
1127367
Link To Document :
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