Title :
Cavity Stabilized X-Band Gunn Oscillator
Author :
Ito, Yukio ; Komizo, Hidemitsu ; Sasagawa, Shinji
fDate :
11/1/1970 12:00:00 AM
Abstract :
The design and resultant experimental investigation of a pulling mechanism for a highly stable X-band Gunn oscillator, stabilized by a high Q TE011-mode reflection cavity, are described. The oscillator shows a temperature coefficient of less than -7 x 10-7 / °C,a low FM noise of 8 Hz per 1-kHz BW at 100 kHz from the carrier, and a wide-band mechanical-tuning capability of several hundred megahertz. In addition, experimental results concerning the hysteresis phenomena of oscillating frequencies, power, FM-noise versus cavity-pulling frequencies, and bias voltages are described.
Keywords :
Admittance; Frequency; Gunn devices; Hysteresis; Impedance; Indium tin oxide; Injection-locked oscillators; Semiconductor device noise; Semiconductor diodes; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1970.1127367