Emission Mechanism and Bias-Dependent Emission Efficiency of Photons Induced by Drain Avalanche in Si MOSFET´s

Emission mechanism of photons induced by the drain avalanche in Si MOSFET´s is discussed by analyzing the emission efficiency (defined by the ratio of the generated photon number to the avalanche-induced carrier number) dependence upon gate and drain voltages, which are found by both photomultiplier measurements and electrical measurements. The dependence are analyzed by using two-dimensional process-device simulator from the point of view of the bias dependence of Iateral (E_L) and vertical (E_V ) electric fields in the channel near the drain. From the analysis, it is found that the bias dependence of emission efficiency can be explained by considering two-dimensional coexistence change of the avalanche-induced electrons and holes. It is concluded that the emission mechanism is the recombination of the avalanche-induced electrons and holes.