On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology

Author

Zhao, J. ; Li, G.P. ; Liao, K.Y. ; Chin, Maw-Rong ; Sun, J.Y.-C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

14

Issue

1

fYear

1993

Firstpage

4

Lastpage

6

Abstract

Boron-doped polysilicon emitter p-n-p transistors show current gain ( beta ) increase after forward current stress and recovery by subsequent low-temperature annealing. The results of isothermal and isochronal annealing suggest that the dissociation of boron-hydrogen pairs is responsible for recovery from the beta increase. Current stress indicates that atomic hydrogen transported to the poly/monosilicon interface and polysilicon grain boundaries by electromigration pairs with boron dopants, thereby reducing surface recombination velocity and increasing beta .<>

Keywords

BiCMOS integrated circuits; annealing; bipolar transistors; boron; electromigration; hydrogen; integrated circuit technology; semiconductor doping; B-H pairs dissociation; C-BiCMOS technology; Si:B, H; complementary BiCMOS; current gain increase; electromigration; forward current stress; isochronal annealing; low-temperature annealing; p-n-p transistors; polysilicon emitter; recovery; surface recombination velocity; Annealing; CMOS technology; Current density; Degradation; Electromigration; Hydrogen; Isothermal processes; Plasma temperature; Stress; Sun;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215082

Filename

215082