Title :
A High-Speed 1-Mbit EPROM with a Ti-Silicided Gate
Author :
Narita, Yoshitaka ; Ohya, Shuichi ; Murao, Yukinobu ; Kanauchi, Shushi ; Kikuchi, Masanori
Abstract :
A high-speed and high-density 1-Mbit EPROM has been developed by utilizing a 1.0-/spl mu/m minimum design rule and Ti-silicided gate technology. Selective Ti silicidation of the poly-Si gate has been successfully employed to reduce the word line resistance. The sheet resistance has been reduced to about 2 /spl Omega///spl square/ without degrading the programming, erasing, and retention characteristics. Both Ti silicidation and device size reduction have been combined to achieve the fast access time of 100 ns.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; PROM; Titanium compounds; VLSI; Circuits; Degradation; Delay lines; EPROM; Large scale integration; MOSFETs; Microcomputers; Nonvolatile memory; Silicidation; Silicides;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052323
