Title :
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
Author :
Bolognesi, C.R. ; Werking, J.D. ; Caine, E.J. ; Kroemer, H. ; Hu, E.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The results show the feasibility and potential of InAs/AlSb-based HFETs for high-speed electronics applications.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; solid-state microwave devices; 0.6 micron; 3 micron; 38.5 GHz; 40 GHz; AlSbAs-AlSb-InAs; HFETs; current gain cutoff frequency; digital alloy barrier; gate length; heterostructure field-effect transistor; high-speed electronics; mesa process; microwave performance; output conductance; scattering parameters; semiconductors; source-to-drain separation; Current measurement; Cutoff frequency; Digital alloys; Frequency measurement; Gain measurement; HEMTs; High-speed electronics; Length measurement; MODFETs; Scattering parameters;
Journal_Title :
Electron Device Letters, IEEE
