Title :
Doubly strained In/sub 0.41/Al/sub 0.59/As/n/sup +/-In/sub 0.65/Ga/sub 0.35/As HFET with high breakdown voltage
Author :
Bahl, Sandeep R. ; Bennett, Brian R. ; Del Alamo, Jesus A.
Author_Institution :
Dept. of Electr. Eng., MIT, Cambridge, MA, USA
Abstract :
An In/sub 0.41/Al/sub 0.59/As/n/sup +/-In/sub 0.65/Ga/sub 0.35/As HFET on InP was designed and fabricated, using the following methodology to enhance device breakdown: a quantum-well channel to introduce electron quantization and increase the effective channel bandgap, a strained In/sub 0.41/Al/sub 0.59/As insulator, and the elimination of parasitic mesa-sidewall gate leakage. The In/sub 0.65/Ga/sub 0.35/As channel is optimally doped to N/sub D/=6*10/sup 18/ cm/sup -3/. The resulting device (L/sub g/=1.9 mu m, W/sub g/=200 mu m) has f/sub t/=14.9 GHz, f/sub max/ in the range of 85 to 101 GHz, MSG=17.6 dB at 12 GHz V/sub B/=12.8 V, and I/sub D(max)/=302 mA/mm. This structure offers the promise of high-voltage applications at high frequencies on InP.<>
Keywords :
III-V semiconductors; aluminium compounds; electric strength; field effect transistors; gallium arsenide; indium compounds; power transistors; semiconductor doping; semiconductor epitaxial layers; semiconductor technology; solid-state microwave devices; 1.9 micron; 12.8 V; 14.9 GHz; 17.6 dB; 200 micron; 85 to 101 GHz; EHF; HFET; InAlAs-InGaAs; SHF; doubly strained HFET; high breakdown voltage; semiconductors; Electric breakdown; Electrons; Gate leakage; HEMTs; Indium phosphide; Insulation; MODFETs; Photonic band gap; Quantization; Quantum well devices;
Journal_Title :
Electron Device Letters, IEEE
