DocumentCode
898127
Title
Static and dynamic behavior of paralleled IGBTs
Author
Letor, Romeo
Author_Institution
SGS-Thomson Microelectron., Catania, Italy
Volume
28
Issue
2
fYear
1992
Firstpage
395
Lastpage
402
Abstract
Problems associated with power device characteristics when power devices are connected in parallel, such as thermal stability and balanced switching behavior, can be solved by using insulated gate bipolar transistors (IGBTs). The author deals with parallel IGBT behaviors analyzing both static and dynamic characteristics. The influence of heatsink mounting, layout, and drive circuit are described in order to demonstrate the best way to make IGBTs parallel for optimum performance. In addition, the major advantages of the ISOTOP package are shown
Keywords
driver circuits; heat sinks; insulated gate bipolar transistors; switching; thermal analysis; ISOTOP package; balanced switching behavior; drive circuit; dynamic behavior; heatsink mounting; insulated gate bipolar transistors; parallel IGBT; static behaviour; thermal stability; Circuit stability; Current density; Extrapolation; Industry Applications Society; Insulated gate bipolar transistors; Packaging; Power dissipation; Switching loss; Temperature; Thermal stability;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/28.126748
Filename
126748
Link To Document