Shallow level recombination current dominance in transistor betas

Author

Lanyon, H.P.D.

Author_Institution

Dept. of Electr. & Comput. Eng., Worcester Polytech. Inst., MA, USA

Volume

14

Issue

2

fYear

1993

Firstpage

49

Lastpage

50

Abstract

A new recombination mechanism, via the high density of shallow donor and acceptors present in the base-emitter junction of integrated circuit transistors, is suggested. In contrast to the recombination via deep centers, this mechanism has an ideal voltage dependence, leading to a beta essentially independent of the base-emitter voltage. It appears to be the dominant component to the base current of integrated circuit transistors. The temperature dependence of the beta of the transistors arises from the ionization energy of the donors and acceptors. The rate-setting capture cross section by neutral acceptor and donors is 1.3(5)*10/sup -5/ cm/sup 2/.<>

Keywords

bipolar transistors; defect electron energy states; electron-hole recombination; Si:As; base-emitter junction; carrier recombination; ideal voltage dependence; integrated circuit transistors; ionization energy; rate-setting capture cross section; shallow level recombination centre dominance; temperature dependence; transistor betas; Charge carrier processes; Diodes; Doping; Electron traps; Energy capture; Ionization; Silicon; Spontaneous emission; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215102

Filename

215102