InP/InGaAsP double-heterostructure optoelectronic switch

Author

Kovacic, S.J. ; Robinson, B.J. ; Simmons, John G. ; Thompson, D.A.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

14

Issue

2

fYear

1993

Firstpage

54

Lastpage

56

Abstract

The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and operational parameters exhibit a lower switching voltage ( approximately=1.8 V) and a higher on-state holding current ( approximately=20 mA) than found in either the Si/SiGe- or GaAs/AlGaAs-based DOES of comparable structures and doping levels. In the on-state, optical emission is observed in a manner analogous to a light emitting diode. However, enhanced optical emission is observed when the device is biased in the regime of negative differential resistance.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; luminescent devices; negative resistance; optical switches; semiconductor switches; 1.3 micron; 1.8 V; 20 mA; III-V semiconductor; InP-InGaAsP switch; double-heterostructure optoelectronic switch; enhanced optical emission; functional characteristics; negative differential resistance; on-state holding current; operational parameters; switching voltage; Contacts; Gallium arsenide; Indium phosphide; Lattices; Light emitting diodes; Silver; Stimulated emission; Substrates; Switches; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215106

Filename

215106