Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET´s for 3-Gb/s operation

Author

Laskar, Joy ; Feng, Milton ; Kruse, Jay

Author_Institution

Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA

Volume

14

Issue

2

fYear

1993

Firstpage

57

Lastpage

59

Abstract

Noise generated in a system establishes the fundamental limitation on the performance of all communication systems and can be characterized with both minimum noise figure (NF/sub min/) and bit error rate (BER). The development of data processing and transmission into the gigabit/second range requires a detailed understanding of the correlation between NF/sub min/ and BER. The authors report on the cryogenic microwave measurements of NF/sub min/, current gain cutoff frequency (F/sub t/), and BER at 3 Gb/s of 0.6- mu m GaAs MESFETs. The noise characterization of GaAs-based MESFET devices and circuits is significant because GaAs-based MESFETs are clearly the key industry device for both digital and analog applications.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device noise; solid-state microwave devices; 0.6 micron; 3 Gbit/s; GaAs devices; III-V semiconductor; MESFET devices; bit-error-rate characterization; cryogenic microwave measurements; current gain cutoff frequency; minimum noise figure; temperature dependent; ultralow-noise; Bit error rate; Character generation; Cryogenics; Current measurement; Data processing; MESFETs; Microwave devices; Noise figure; Noise generators; Noise measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215107

Filename

215107